NSS20101JT1G Overview

DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 220mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 100mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.Parts of this part have transition frequencies of 350MHz.Breakdown input voltage is 45V volts.A maximum collector current of 2A volts can be achieved.

NSS20101JT1G Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 350MHz

NSS20101JT1G Applications

There are a lot of ON Semiconductor NSS20101JT1G applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver