BUJD103AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJD103AD,118 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Reference Standard
IEC-60134
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
11 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.392416
$1.392416
10
$1.313600
$13.136
100
$1.239245
$123.9245
500
$1.169099
$584.5495
1000
$1.102924
$1102.924
BUJD103AD,118 Product Details
BUJD103AD,118 Overview
In this device, the DC current gain is 11 @ 2A 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a 400V maximal voltage in the device due to collector-emitter breakdown.
BUJD103AD,118 Features
the DC current gain for this device is 11 @ 2A 5V the vce saturation(Max) is 1V @ 1A, 4A
BUJD103AD,118 Applications
There are a lot of WeEn Semiconductors BUJD103AD,118 applications of single BJT transistors.