NSS20500UW3TBG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSS20500UW3TBG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
3-WDFN Exposed Pad
Surface Mount
YES
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
875mW
Pin Count
3
Configuration
Single
Power - Max
875mW
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
260mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
20V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.516000
$0.516
10
$0.486792
$4.86792
100
$0.459238
$45.9238
500
$0.433244
$216.622
1000
$0.408720
$408.72
NSS20500UW3TBG Product Details
NSS20500UW3TBG Overview
In this device, the DC current gain is 200 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 400mA, 4A.As a result, the part has a transition frequency of 100MHz.The maximum collector current is 5A volts.
NSS20500UW3TBG Features
the DC current gain for this device is 200 @ 2A 2V the vce saturation(Max) is 260mV @ 400mA, 4A a transition frequency of 100MHz
NSS20500UW3TBG Applications
There are a lot of ON Semiconductor NSS20500UW3TBG applications of single BJT transistors.