NSS20501UW3TBG Overview

In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 125mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.The part has a transition frequency of 150MHz.Collector current can be as low as 5A volts at its maximum.

NSS20501UW3TBG Features

the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 125mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

NSS20501UW3TBG Applications

There are a lot of ON Semiconductor NSS20501UW3TBG applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface