NSS40300MZ4T1G Overview

In this device, the DC current gain is 175 @ 1A 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 160MHz.As a result, it can handle voltages as low as 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

NSS40300MZ4T1G Features

the DC current gain for this device is 175 @ 1A 1V
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz

NSS40300MZ4T1G Applications

There are a lot of ON Semiconductor NSS40300MZ4T1G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting