KST56MTF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -4V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.An input voltage of 80V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

KST56MTF Features

the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz

KST56MTF Applications

There are a lot of ON Semiconductor KST56MTF applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface