NSV12200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSV12200LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
540mW
Power - Max
540mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
180mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
12V
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.061526
$1.061526
10
$1.001440
$10.0144
100
$0.944755
$94.4755
500
$0.891278
$445.639
1000
$0.840828
$840.828
NSV12200LT1G Product Details
NSV12200LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 500mA 2V.When VCE saturation is 180mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSV12200LT1G Features
the DC current gain for this device is 250 @ 500mA 2V the vce saturation(Max) is 180mV @ 200mA, 2A
NSV12200LT1G Applications
There are a lot of ON Semiconductor NSV12200LT1G applications of single BJT transistors.