BC69-25PASX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC69-25PASX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Mounting Type
Surface Mount
Package / Case
3-UDFN Exposed Pad
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2015
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
S-PDSO-N3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
420mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
2A
Transition Frequency
140MHz
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.311075
$0.311075
10
$0.293467
$2.93467
100
$0.276856
$27.6856
500
$0.261185
$130.5925
1000
$0.246400
$246.4
BC69-25PASX Product Details
BC69-25PASX Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 200mA, 2A.In this part, there is a transition frequency of 140MHz.A 20V maximal voltage - Collector Emitter Breakdown is present in the device.
BC69-25PASX Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 600mV @ 200mA, 2A a transition frequency of 140MHz
BC69-25PASX Applications
There are a lot of Nexperia USA Inc. BC69-25PASX applications of single BJT transistors.