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NSV1C201LT1G

  • NSV1C201LT1G
  • NSV1C201LT1G

NSV1C201LT1G

NSV1C201LT1G

ON Semiconductor

NSV1C201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV1C201LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 490mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 110MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage 30mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 140V
Continuous Collector Current 2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.21194 $0.63582
6,000 $0.19898 $1.19388
15,000 $0.18603 $2.79045
30,000 $0.18387 $5.5161
NSV1C201LT1G Product Details

NSV1C201LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.With a collector emitter saturation voltage of 30mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 150mV @ 200mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 100V volts.A maximum collector current of 3A volts is possible.

NSV1C201LT1G Features


the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 150mV @ 200mA, 2A
a transition frequency of 110MHz

NSV1C201LT1G Applications


There are a lot of ON Semiconductor NSV1C201LT1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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