NSV40501UW3T2G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 400mA, 4A.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

NSV40501UW3T2G Features

the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 150mV @ 400mA, 4A

NSV40501UW3T2G Applications

There are a lot of ON Semiconductor NSV40501UW3T2G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter