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NSVBC124EDXV6T1G

NSVBC124EDXV6T1G

NSVBC124EDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

SOT-23

NSVBC124EDXV6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Pin Count 6
Power - Max 500mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
NSVBC124EDXV6T1G Product Details
The ON Semiconductor NSVBC124EDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. This device is designed to provide a low-cost, space-saving solution for applications requiring two NPN transistors. It features a maximum power dissipation of 0.5W and a maximum collector-emitter voltage of 30V. The device is ideal for use in a variety of applications, including power management, motor control, and audio amplification. It is also suitable for use in automotive, industrial, and consumer electronics applications. The device is RoHS compliant and halogen-free.

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