MUN5116DW1T1

new-10%

Manufacturer part number:MUN5116DW1T1

Manufacturer:ON Semiconductor

Description:TRANS 2PNP PREBIAS 0.25W SOT363

Case Package:SOT-23

Datasheet:MUN5116DW1T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn80Pb20)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	MUN51**DW1T
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	250mW
Transistor Application	SWITCHING
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	-100mA
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead