NSVBC817-16LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In the part, the transition frequency is 100MHz.When collector current reaches its maximum, it can reach 500mA volts.
NSVBC817-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NSVBC817-16LT1G Applications
There are a lot of ON Semiconductor NSVBC817-16LT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
