NSV20101JT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.A VCE saturation (Max) of 220mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A transition frequency of 350MHz is present in the part.A maximum collector current of 1A volts can be achieved.
NSV20101JT1G Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 220mV @ 100mA, 1A
a transition frequency of 350MHz
NSV20101JT1G Applications
There are a lot of ON Semiconductor NSV20101JT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
