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NSV20101JT1G

NSV20101JT1G

NSV20101JT1G

ON Semiconductor

NSV20101JT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV20101JT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 255mW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 255mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 220mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 350MHz
Frequency - Transition 350MHz
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.64680 $1.9404
NSV20101JT1G Product Details

NSV20101JT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.A VCE saturation (Max) of 220mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A transition frequency of 350MHz is present in the part.A maximum collector current of 1A volts can be achieved.

NSV20101JT1G Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 220mV @ 100mA, 1A
a transition frequency of 350MHz

NSV20101JT1G Applications


There are a lot of ON Semiconductor NSV20101JT1G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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