NSVBC857BLT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVBC857BLT3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Reference Standard
AEC-Q101
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.494208
$0.494208
10
$0.466235
$4.66235
100
$0.439844
$43.9844
500
$0.414947
$207.4735
1000
$0.391459
$391.459
NSVBC857BLT3G Product Details
NSVBC857BLT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.100MHz is present in the transition frequency.During maximum operation, collector current can be as low as 100mA volts.
NSVBC857BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA a transition frequency of 100MHz
NSVBC857BLT3G Applications
There are a lot of ON Semiconductor NSVBC857BLT3G applications of single BJT transistors.