NSVEMT1DXV6T1G

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Manufacturer part number:NSVEMT1DXV6T1G

Manufacturer:ON Semiconductor

Description:TRANS 2PNP 60V 0.1A SOT563

Case Package:SOT-23

Datasheet:NSVEMT1DXV6T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	500mW
Terminal Form	FLAT
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS
Power - Max	500mW
Transistor Application	AMPLIFIER
Polarity/Channel Type	PNP
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	500mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 6V
Current - Collector Cutoff (Max)	500pA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	60V
Transition Frequency	140MHz
Frequency - Transition	140MHz
VCEsat-Max	0.5 V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free