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HN2C01FEYTE85LF

  • HN2C01FEYTE85LF
  • HN2C01FEYTE85LF

HN2C01FEYTE85LF

HN2C01FEYTE85LF

Toshiba Semiconductor and Storage

Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A

SOT-23

HN2C01FEYTE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity NPN
Element Configuration Dual
Power - Max 100mW
Gain Bandwidth Product 60MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.554931 $0.554931
10 $0.523520 $5.2352
100 $0.493887 $49.3887
500 $0.465931 $232.9655
1000 $0.439557 $439.557

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