NSVMMBT2222AM3T5G

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Manufacturer part number:NSVMMBT2222AM3T5G

Manufacturer:ON Semiconductor

Description:NSVMMBT2222AM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVMMBT2222AM3T5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	SOT-723
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	640mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA 10V
Current - Collector Cutoff (Max)	10nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Frequency - Transition	300MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

NSVMMBT2222AM3T5G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Device displays Collector Emitter Breakdown (40V maximal voltage).