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NSVMMBT2222AM3T5G

  • NSVMMBT2222AM3T5G
  • NSVMMBT2222AM3T5G

NSVMMBT2222AM3T5G

NSVMMBT2222AM3T5G

ON Semiconductor

NSVMMBT2222AM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT2222AM3T5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SOT-723
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 640mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
8,000 $0.06048 $0.48384
16,000 $0.05141 $0.82256
24,000 $0.04838 $1.16112
56,000 $0.04536 $2.54016
200,000 $0.04032 $8.064
NSVMMBT2222AM3T5G Product Details

NSVMMBT2222AM3T5G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Device displays Collector Emitter Breakdown (40V maximal voltage).

NSVMMBT2222AM3T5G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

NSVMMBT2222AM3T5G Applications


There are a lot of ON Semiconductor NSVMMBT2222AM3T5G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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