2SD2703TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2703TL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Max Power Dissipation
800mW
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2703
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
320MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
30V
Max Frequency
100MHz
Transition Frequency
320MHz
Collector Emitter Saturation Voltage
120mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Height
820μm
Length
2.1mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.18600
$0.558
6,000
$0.17400
$1.044
15,000
$0.16800
$2.52
2SD2703TL Product Details
2SD2703TL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 100mA 2V.The collector emitter saturation voltage is 120mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The part has a transition frequency of 320MHz.As a result, it can handle voltages as low as 30V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD2703TL Features
the DC current gain for this device is 270 @ 100mA 2V a collector emitter saturation voltage of 120mV the vce saturation(Max) is 350mV @ 25mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 320MHz
2SD2703TL Applications
There are a lot of ROHM Semiconductor 2SD2703TL applications of single BJT transistors.