NSVMMUN2112LT1G

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NSVMMUN2112LT1G

Manufacturer part number:NSVMMUN2112LT1G

Manufacturer:ON Semiconductor

Description:NSVMMUN2112LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVMMUN2112LT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	246mW
Number of Elements	1
Power - Max	246mW
Polarity/Channel Type	PNP
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	22 k Ω
Resistor - Emitter Base (R2)	22 k Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free