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NSVMMUN2232LT1G

NSVMMUN2232LT1G

NSVMMUN2232LT1G

ON Semiconductor

TRANS PREBIAS NPN 246MW SOT23-3

SOT-23

NSVMMUN2232LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 246mW
Base Part Number MMUN22**L
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 15
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
NSVMMUN2232LT1G Product Details
The ON Semiconductor NSVMMUN2232LT1G is a single, pre-biased bipolar junction transistor (BJT) in a SOT23-3 package. It is designed for use in low-power, low-voltage applications. This device features a low collector-emitter saturation voltage of 0.2 V and a high current gain of 246 mW. It is suitable for use in a wide range of applications, including switching, amplification, and signal processing. The device is also RoHS compliant and has a maximum operating temperature of 150°C.

Features of the ON Semiconductor NSVMMUN2232LT1G include:
• Low collector-emitter saturation voltage of 0.2 V
• High current gain of 246 mW
• RoHS compliant
• Maximum operating temperature of 150°C
• SOT23-3 package

Applications of the ON Semiconductor NSVMMUN2232LT1G include:
• Switching
• Amplification
• Signal processing
• Low-power, low-voltage applications

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