RN1416,LF

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RN1416,LF

Manufacturer part number:RN1416,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1416,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1416,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	S-Mini
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Polarity	NPN
Element Configuration	Single
Power - Max	200mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	7V
hFE Min	50
Resistor - Base (R1)	4.7 kOhms
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10 kOhms
Height	1.1mm
Length	2.9mm
Width	1.5mm
RoHS Status	RoHS Compliant