NSVMUN5316DW1T1G

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NSVMUN5316DW1T1G

Manufacturer part number:NSVMUN5316DW1T1G

Manufacturer:ON Semiconductor

Description:NSVMUN5316DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSVMUN5316DW1T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTOR
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	250mW
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	250mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN AND PNP
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Resistor - Base (R1)	4.7k Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free