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NTA4151PT1G

NTA4151PT1G

NTA4151PT1G

ON Semiconductor

NTA4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTA4151PT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 260mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -760mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 301mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 301mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Current - Continuous Drain (Id) @ 25°C 760mA Tj
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 8.2 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 760mA
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.76A
Drain to Source Breakdown Voltage -20V
Height 800μm
Length 1.65mm
Width 900μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09504 $0.28512
6,000 $0.08591 $0.51546
15,000 $0.07678 $1.1517
30,000 $0.07221 $2.1663
75,000 $0.06445 $4.83375
150,000 $0.06217 $9.3255
NTA4151PT1G Product Details

NTA4151PT1G Description


In this P-Channel 2.6V MOSFET, Fairchild's revolutionary PowerTrench process was carefully adjusted to minimize on-state resistance while maintaining low gate charge for improved switching performance. These devices were designed to provide excellent power dissipation in a small package for circumstances where larger items aren't possible.



NTA4151PT1G Features


?Low RDS(on) for increased efficiency and battery life


? Outline Package for Small Businesses (1.6 x 1.6 mm)


? Standard Gullwing Package SC75


? ESD-Resistant Gate


? These products are lead-free, halogen-free/BFR-free, and RoHS compliant.



NTA4151PT1G Applications


? Switch with a High Side Load


? Conversion from DC to DC


? Drive Circuits for Small Vehicles


? Cell phones, PDAs, digital cameras, and other battery-operated devices


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