NTA4151PT1G

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NTA4151PT1G

Manufacturer part number:NTA4151PT1G

Manufacturer:ON Semiconductor

Description:NTA4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTA4151PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	260mOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-760mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	301mW Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	301mW
Turn On Delay Time	8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 5V
Current - Continuous Drain (Id) @ 25°C	760mA Tj
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
Rise Time	8.2ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	8.2 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	760mA
Threshold Voltage	-450mV
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.76A
Drain to Source Breakdown Voltage	-20V
Height	800μm
Length	1.65mm
Width	900μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free