NTA7002NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTA7002NT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Number of Pins
3
Supplier Device Package
SC-75, SOT-416
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
7.5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
154mA
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300mW Tj
Element Configuration
Single
Power Dissipation
300mW
Turn On Delay Time
13 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
7Ohm @ 154mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 5V
Current - Continuous Drain (Id) @ 25°C
154mA Tj
Rise Time
15ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±10V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
98 ns
Continuous Drain Current (ID)
154mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
10V
Drain to Source Breakdown Voltage
30V
Input Capacitance
20pF
Drain to Source Resistance
1.4Ohm
Rds On Max
7 Ω
Nominal Vgs
1 V
Height
800μm
Length
1.65mm
Width
900μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.098880
$0.09888
500
$0.072706
$36.353
1000
$0.060588
$60.588
2000
$0.055586
$111.172
5000
$0.051949
$259.745
10000
$0.048325
$483.25
15000
$0.046736
$701.04
50000
$0.045955
$2297.75
NTA7002NT1G Product Details
NTA7002NT1G Description
NTA7002NT1G transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NTA7002NT1G MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.