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NTB23N03R

NTB23N03R

NTB23N03R

ON Semiconductor

MOSFET N-CH 25V 23A D2PAK

SOT-23

NTB23N03R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 23A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 37.5W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 37.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
Current - Continuous Drain (Id) @ 25°C 23A Ta
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
Rise Time 14.9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 60A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.979369 $0.979369
10 $0.923933 $9.23933
100 $0.871635 $87.1635
500 $0.822296 $411.148
1000 $0.775752 $775.752

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