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TK10A60W,S4X

TK10A60W,S4X

TK10A60W,S4X

Toshiba Semiconductor and Storage

MOSFET N CH 600V 9.7A TO-220

SOT-23

TK10A60W,S4X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 52 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 300V
Current - Continuous Drain (Id) @ 25°C 9.7A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $1.63800 $3.276

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