NTB52N10G

new-10%

Manufacturer part number:NTB52N10G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 52A D2PAK

Case Package:SOT-23

Datasheet:NTB52N10G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	52A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2W Ta 178W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	178W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	52A Tc
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	74 ns
Continuous Drain Current (ID)	52A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	800 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free