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PHB112N06T,118

PHB112N06T,118

PHB112N06T,118

NXP USA Inc.

MOSFET N-CH 55V 75A D2PAK

SOT-23

PHB112N06T,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4352pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

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