NTB5605PG

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Manufacturer part number:NTB5605PG

Manufacturer:ON Semiconductor

Description:NTB5605PG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTB5605PG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-18.5A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	88W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	88W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 8.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18.5A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
Rise Time	122ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	18.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	17A
Drain-source On Resistance-Max	0.14Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	55A
RoHS Status	RoHS Compliant
Lead Free	Lead Free