NTBV75N06T4G

new-10%

Manufacturer part number:NTBV75N06T4G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 60V 75A T/R

Case Package:SOT-23

Datasheet:NTBV75N06T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Max Power Dissipation	2.4W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.5m Ω @ 37.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Ta
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	75A
Drain-source On Resistance-Max	0.0095Ohm
Pulsed Drain Current-Max (IDM)	225A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	844 mJ
RoHS Status	ROHS3 Compliant