NTD3055L170 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD3055L170 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
HTS Code
8541.29.00.95
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Current Rating
9A
Pin Count
3
Power Dissipation-Max
1.5W Ta 28.5W Tj
Element Configuration
Single
Power Dissipation
28.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
170m Ω @ 4.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
275pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9A Ta
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
Rise Time
69ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±15V
Fall Time (Typ)
38 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
9A
Gate to Source Voltage (Vgs)
15V
Drain to Source Breakdown Voltage
60V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
NTD3055L170 Product Details
NTD3055L170 Description
NTD3055L170 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTD3055L170 is -55°C~175°C TJ and its maximum power dissipation is 28.5W. NTD3055L170 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NTD3055L170 Features
NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable