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PHP34NQ11T,127

PHP34NQ11T,127

PHP34NQ11T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 17A, 10V ±20V 1700pF @ 25V 40nC @ 10V 110V TO-220-3

SOT-23

PHP34NQ11T,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 110V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 35A
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 110V
Avalanche Energy Rating (Eas) 115 mJ
RoHS Status ROHS3 Compliant
PHP34NQ11T,127 Product Details

PHP34NQ11T,127 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 115 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 35A.Pulsed drain current is maximum rated peak drain current 140A.A normal operation of the DS requires keeping the breakdown voltage above 110V.This transistor requires a drain-source voltage (Vdss) of 110V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

PHP34NQ11T,127 Features


the avalanche energy rating (Eas) is 115 mJ
based on its rated peak drain current 140A.
a 110V drain to source voltage (Vdss)


PHP34NQ11T,127 Applications


There are a lot of NXP USA Inc.
PHP34NQ11T,127 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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