NTD4809NA-1G

new-10%

Manufacturer part number:NTD4809NA-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 9A IPAK

Case Package:SOT-23

Datasheet:NTD4809NA-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.3W Ta 52W Tc
Element Configuration	Single
Power Dissipation	2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1456pF @ 12V
Current - Continuous Drain (Id) @ 25°C	9.6A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Rise Time	22.7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	2.3 ns
Turn-Off Delay Time	25.3 ns
Continuous Drain Current (ID)	11.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant