NTD4857N-1G

new-10%

Manufacturer part number:NTD4857N-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 12A IPAK

Case Package:SOT-23

Datasheet:NTD4857N-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	4
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Pin Count	4
Power Dissipation-Max	1.31W Ta 56.6W Tc
Element Configuration	Single
Power Dissipation	2.1W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1960pF @ 12V
Current - Continuous Drain (Id) @ 25°C	12A Ta 78A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 4.5V
Rise Time	18.7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	14.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free