APT34N80B2C3G Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 670 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4510pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 34A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

APT34N80B2C3G Features

the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 34A
the turn-off delay time is 70 ns

APT34N80B2C3G Applications

There are a lot of Microsemi Corporation
APT34N80B2C3G applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies