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NTD4863NA-35G

NTD4863NA-35G

NTD4863NA-35G

ON Semiconductor

MOSFET N-CH 25V 49A SGL IPAK

SOT-23

NTD4863NA-35G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1.27W Ta 36.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.95W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 11.3mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.2A
Pulsed Drain Current-Max (IDM) 98A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 60.5 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

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