NTD5406NG

new-10%

Manufacturer part number:NTD5406NG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 70A DPAK

Case Package:SOT-23

Datasheet:NTD5406NG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	70A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3W Ta 100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 32V
Current - Continuous Drain (Id) @ 25°C	12.2A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	147ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.01Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	150A
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free