PMV65XP/MIR

new-10%

Manufacturer part number:PMV65XP/MIR

Manufacturer:Nexperia USA Inc.

Description:MOSFET P-CH 20V SOT23

Case Package:SOT-23

Datasheet:PMV65XP/MIR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	compliant
Pin Count	3
Reference Standard	IEC-60134
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	480mW Ta 4.17W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	74m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	744pF @ 20V
Current - Continuous Drain (Id) @ 25°C	2.8A Ta
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
JEDEC-95 Code	TO-236AB
Drain Current-Max (Abs) (ID)	3.9A
Drain-source On Resistance-Max	0.076Ohm
DS Breakdown Voltage-Min	20V