NTD60N02RG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NTD60N02RG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
4
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Current Rating
62A
Pin Count
4
Power Dissipation-Max
1.25W Ta 58W Tc
Element Configuration
Single
Power Dissipation
1.87W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C
8.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
32A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
NTD60N02RG Product Details
NTD60N02RG Description
NTD60N02RG is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 25V. The operating temperature of the NTD60N02RG is -55°C~175°C TJ and its maximum power dissipation is 1.87W. NTD60N02RG has 4 pins and it is available in tube packaging way. The Turn-Off Delay Time of NTD60N02RG is 19 ns and its Continuous Drain Current (ID) is 32A.
NTD60N02RG Features
Planar HD3e Process for Fast Switching Performance
Low RDS(on) to Minimize Conduction Loss
Low Ciss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in High?Efficiency DC?DC Converters