NTD6416ANL-1G

new-10%

Manufacturer part number:NTD6416ANL-1G

Manufacturer:ON Semiconductor

Description:MOSFET NFET DPAK 100V 15A 86MOHM

Case Package:SOT-23

Datasheet:NTD6416ANL-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Pin Count	4
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	71W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	71W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	74m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	70A
Avalanche Energy Rating (Eas)	50 mJ
Height	7.62mm
Length	6.73mm
Width	2.38mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free