NTD6600N-001

new-10%

Manufacturer part number:NTD6600N-001

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 12A IPAK

Case Package:SOT-23

Datasheet:NTD6600N-001 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	12A
Power Dissipation-Max	1.28W Ta 56.6W Tc
Element Configuration	Single
Power Dissipation	56.6W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	146m Ω @ 6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	75ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead