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RFP30P06

RFP30P06

RFP30P06

ON Semiconductor

RFP30P06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP30P06 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 20V
Drain to Source Voltage (Vdss) 60V
RoHS StatusNon-RoHS Compliant
In-Stock:3185 items

RFP30P06 Product Details

RFP30P06 Description


The RFP30P06 is a P-Channel power MOSFET made with MegaFET technology. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance. It can be run straight off the integrated circuits.



RFP30P06 Features


  • 30A, 60V

  • rDS(ON) = 0.065?

  • Temperature Compensating PSPICE? Model

  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

  • 175℃ Operating Temperature



RFP30P06 Applications


  • Notebook computers

  • Portable phones

  • PCMCIA cards

  • Other battery-powered circuits


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