CSD23280F3

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Manufacturer part number:CSD23280F3

Manufacturer:Texas Instruments

Description:CSD23280F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD23280F3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	FemtoFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Base Part Number	CSD23280
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	116m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id	0.95V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	234pF @ 6V
Current - Continuous Drain (Id) @ 25°C	1.8A Ta
Gate Charge (Qg) (Max) @ Vgs	1.23nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	-6V
Continuous Drain Current (ID)	1.8A
Drain-source On Resistance-Max	0.25Ohm
Pulsed Drain Current-Max (IDM)	11.4A
DS Breakdown Voltage-Min	12V
Feedback Cap-Max (Crss)	11.1 pF
Length	690μm
Width	600μm
Thickness	345μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price

CSD23280F3 Description

The footprint of many handheld and mobile applications is reduced by the design and optimization of this -12-V, 97-m, P-Channel FemtoFETTM MOSFET. Standard tiny signal MOSFETs can be replaced with this technology while having a significantly smaller footprint. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.