NTF3055L108T3LF

new-10%

Manufacturer part number:NTF3055L108T3LF

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 3A SOT223

Case Package:SOT-23

Datasheet:NTF3055L108T3LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	3A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 1.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 5V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	15V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.12Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	9A
Avalanche Energy Rating (Eas)	74 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead