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ZXMNS3BM832TA

ZXMNS3BM832TA

ZXMNS3BM832TA

Diodes Incorporated

MOSFET N-CH 30V 2A 8-MLP

SOT-23

ZXMNS3BM832TA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2002
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 2.7A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PQFP-F10
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 1.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 314pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
Rise Time 1.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 2.1 ns
Turn-Off Delay Time 5.1 ns
Continuous Drain Current (ID) 2.72A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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