NTF3055L175T3LF

new-10%

Manufacturer part number:NTF3055L175T3LF

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 2A SOT223

Case Package:SOT-23

Datasheet:NTF3055L175T3LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	175m Ω @ 1A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Continuous Drain Current (ID)	2A
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.175Ohm
Pulsed Drain Current-Max (IDM)	6A
Avalanche Energy Rating (Eas)	65 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead