STB20NM50-1

new-10%

Manufacturer part number:STB20NM50-1

Manufacturer:STMicroelectronics

Description:MOSFET N-Ch 500 Volt 20 Amp

Case Package:SOT-23

Datasheet:STB20NM50-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	200mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	550V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB20N
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	192W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	192W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	650 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free