NTHL080N120SC1

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Manufacturer part number:NTHL080N120SC1

Manufacturer:ON Semiconductor

Description:NTHL080N120SC1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTHL080N120SC1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Terminal Finish	Tin (Sn)
Technology	SiCFET (Silicon Carbide)
Reach Compliance Code	not_compliant
Power Dissipation-Max	348W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	110m Ω @ 20A, 20V
Vgs(th) (Max) @ Id	4.3V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 800V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 20V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -15V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$20.08000	$20.08
10	$18.32000	$183.2
450	$14.36000	$6462

Description

The NTHL080N120SC1 is a MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A. In comparison to Silicon, Silicon Carbide (SiC) MOSFETs use a brand-new technology that offers superior switching performance and greater dependability. Low capacitance and gate charge are also made possible by the small chip size and low ON resistance. The maximum efficiency, quicker operating frequency, increased power density, decreased EMI and decreased system size are consequently system benefits.