NTHL080N120SC1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTHL080N120SC1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Terminal Finish
Tin (Sn)
Technology
SiCFET (Silicon Carbide)
Reach Compliance Code
not_compliant
Power Dissipation-Max
348W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
110m Ω @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds
1670pF @ 800V
Current - Continuous Drain (Id) @ 25°C
44A Tc
Gate Charge (Qg) (Max) @ Vgs
56nC @ 20V
Drain to Source Voltage (Vdss)
1200V
Drive Voltage (Max Rds On,Min Rds On)
20V
Vgs (Max)
+25V, -15V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$20.08000
$20.08
10
$18.32000
$183.2
450
$14.36000
$6462
NTHL080N120SC1 Product Details
Description
The NTHL080N120SC1 is a MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A. In comparison to Silicon, Silicon Carbide (SiC) MOSFETs use a brand-new technology that offers superior switching performance and greater dependability. Low capacitance and gate charge are also made possible by the small chip size and low ON resistance. The maximum efficiency, quicker operating frequency, increased power density, decreased EMI and decreased system size are consequently system benefits.