NTLJD3182FZTBG

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Manufacturer part number:NTLJD3182FZTBG

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.2A 6-WDFN

Case Package:SOT-23

Datasheet:NTLJD3182FZTBG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 4.5V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.144Ohm
Drain to Source Breakdown Voltage	20V
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant